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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4026 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) APPLICATIONS For high breakdown voltage high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 500 400 7 5 10 1.5 UNIT V V V A A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Base current TC=25ae 35 W 2 150 -55~150 ae ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=2A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 5 MIN 400 TYP. 2SC4026 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V 1.0 1.5 100 100 |I |I V V A A Switching times ton ts tf Fall time Turn-on time Storage time INC E SEM ANG H IC=2A ;IB1=0.4A;IB2=-0.8A VCC=150V OND IC TOR UC 0.7 2.0 0.3 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4026 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4026 CHA IN E SEM NG OND IC TOR UC 4 |
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